| PART |
Description |
Maker |
| AT27C1024 AT27C1024-12JC AT27C1024-12JI AT27C1024- |
Dual 4-Bit Binary Counters 14-SSOP -40 to 85
Dual 4-Bit Binary Counters 14-SO -40 to 85 64K X 16 OTPROM, 55 ns, PQCC44
1-Megabit 64K x 16 OTP EPROM 64K X 16 OTPROM, 90 ns, PDIP40
1-Megabit 64K x 16 OTP EPROM 64K X 16 OTPROM, 90 ns, PQCC44
1-Megabit 64K x 16 OTP EPROM 64K X 16 OTPROM, 90 ns, PDSO40
Dual 4-Bit Binary Counters 14-TSSOP -40 to 85 64K X 16 OTPROM, 70 ns, PQCC44
Dual 4-Bit Binary Counters 14-SOIC -40 to 85
Dual 4-Bit Binary Counters 14-TVSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 27C512TRPFB-12 27C512TRPFB-15 27C512TRPFS-15 27C51 |
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 150 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 200 ns, DIP32
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DFP32
|
Maxwell Technologies, Inc
|
| MX27L512PC-15 MX27L512TI-20 MX27L512TI-12 MX27L512 |
512K-BIT [64K x 8] CMOS EPROM 64K X 8 OTPROM, 120 ns, PDIP28
|
Macronix International Co., Ltd.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT90CAN3207 |
8-bit Microcontroller with 32K/64K/128K Bytes of ISP Flash and CAN Controller 82K/64K/128K的ISP闪存和微控制器的CAN字节
|
Atmel, Corp.
|
| MCM6665A |
64K DRAM
|
Motorola
|
| AS4C4067883C |
64K x 4 DRAM
|
AUSTIN[Austin Semiconductor]
|
| MT42C4064 |
64k*4 dram with 256*4 sam
|
MT
|
| NTE2164 NTE-DRAM NTE4164 NTE2102 NTE2128 NTE2117 N |
NMOS / 64k DRAM
MICROPROCESSOR & MEMORY CIRCUITS
|
NTE Electronics
|
| Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns
4M x 1 Bit FPM DRAM 3.3 V 50 ns
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
4M x 1 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
